MOSFET IXTH30N50
MOSFET IXTH30N50
MAKE – IXYS
Features
- International standard package JEDEC TO-247 AD
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
Applications
- Switch-mode and resonant-mode power supplies
- Motor controls
- Uninterruptible Power Supplies (UPS)
- DC choppers
Advantages
- Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
- Space savings
- High power density
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MOSFET IRF2807
MOSFET, SemiconductorsMAKE - IR
Features- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
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DIODE SW18CXC380
Diodes, SemiconductorsMAKE - WESTCODE
Features- Repetitive peak reverse voltage - 1600-2400V
- Non-Repetitive peak reverse voltage - 1700-2500V
- Maximum average forward current - 642A
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