IGBT MODULE SKM400GB125D
IGBT MODULE SKM400GB125D
MAKE – SEMIKRON
Features
- Low inuctance case
- Short tail current with low temperature dependence
- High short circuit capability, self limiting to 6 X I cnom
Features
- Fast & soft inverse CAL diodes
- isolated copper baseplate using DBC direct copper bonding technology
- Large clearance (13 mm) and creepage distances (20 mm).
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DIODE FM160
Diodes, Semiconductors
Features
- Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.
- For surface mounted applications.
- Exceeds environmental standards of MIL-S-19500 /228
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IGBT MODULE BSM300GA160-DN13C-E3212
Power Modules, SemiconductorsMAKE - EUPEC
Features| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Continuous Collector Current at 25 C: | 100 A |
| Maximum Operating Temperature: | + 150 C |
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DIODE SW18CXC380
Diodes, SemiconductorsMAKE - WESTCODE
Features- Repetitive peak reverse voltage - 1600-2400V
- Non-Repetitive peak reverse voltage - 1700-2500V
- Maximum average forward current - 642A
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