MG100J2YS40
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IGBT MODULE FP25R12KT3
Power Modules, SemiconductorsMAKE - INFINEON
Features- Collector- Emitter Voltage VCEO Max: 1200v
- Continuous Collector Current at 25 C: 40A
- Maximum Operating Temperature: +125 C
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IGBT MODULE IXGH10N100A
Power Modules, SemiconductorsMAKE - IXYS
Features- International standard package JEDEC TO-247 AD
- 2nd generation HDMOSTM process
- Low VCE(sat)- for low on-state conduction losses
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IGBT MODULE FF300R12KE4
Power Modules, SemiconductorsMAKE - INFINEON
Features- Collector- Emitter Voltage VCEO Max: 1200V
- Continuous Collector Current at 25 C: 460V
- Gate-Emitter Leakage Current: 400 nA
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IGBT MODULE IRG4PC40KD
Power Modules, SemiconductorsMAKE - IR
Features- Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
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