2MBI200U4-120
2MBI200U4-120
Make – Fuji
Feature
- High temperature
- Intermitted ON time ( for IGBT )
- Terminal Strength Test Method 401 5 0
(Pull test)
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NGTB40N120SWG
IGBTMake - SCI
Feature
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 s Short Circuit Capability
- These are Pb−Free Devices
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MG50J2 YS50
IGBTMake - Toshiba
Feature
- The electrodes are isolated from case
- High input impedance
- Includes a complete half bridge in one package .
- Enhancement Mode
- High speed
- Low saturation voltage
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SEMIX252GB126HDS
IGBTMake - Semikron
Feature
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532
Sale
Quickview ₹2,500.00 ₹1,500.00
IGBT SIP Module CPV362M4UPBF – Vishay
IGBT, Semiconductors
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for high speed, see fig. 1 for current vs.
frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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