2MB1450VH-120-50 Home>Semiconductors>IGBT>2MB1450VH-120-50 2MB1450VH-120-50 Make – 2MB1450VH-120-50 Featue High sped switching Voltage drive Low inductance module structure Add to Wishlist Product added! Browse Wishlist The product is already in the wishlist! Browse Wishlist Category: IGBT Share000 Send Enquiry Download PDF reddd Read MoreProduct added to wishlist. ADS7832BN Read MoreProduct added to wishlist. 1800MFD/450VDC Read MoreProduct added to wishlist. C8051F020GQR Read MoreProduct added to wishlist. EE4220 - CF139GRADE - UNGAPPED Read MoreProduct added to wishlist. H-23-6A Read MoreProduct added to wishlist. CONDUCTION COOLED CAPACITOR CCC20.0uF Read MoreProduct added to wishlist. this is new product for test notification Read MoreProduct added to wishlist. Related products Read MoreProduct added to wishlist. Quickview MG50J2 YS50 IGBT Make - Toshiba Feature The electrodes are isolated from case High input impedance Includes a complete half bridge in one package . Enhancement Mode High speed Low saturation voltage Read MoreProduct added to wishlist. Read MoreProduct added to wishlist. Quickview SEMIX252GB126HDS IGBT Make - Semikron Feature Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Read MoreProduct added to wishlist. Read MoreProduct added to wishlist. Quickview PM150DSA120-2 IGBT Make - Mitsubishi Read MoreProduct added to wishlist. Read MoreProduct added to wishlist. Quickview GT40J121 IGBT Make - Toshiba Feature Sixth generation Enhancement mode High-speed switching: tf = 0.20 μs (typ.) (IC = 40 A) Low saturation voltage: VCE(sat) = 1.45 V (typ.) (IC = 40 A) TO-3P(N)IS (Toshiba package name) Read MoreProduct added to wishlist. Reviews(0) There are no reviews yet. Add a Review Be the first to review “2MB1450VH-120-50” Cancel reply Your ReviewYour Rating Rate… Perfect Good Average Not that bad Very Poor Name * Email *
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