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IR2118 IC
TransistorsMake – IR
Feature
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout • CMOS Schmitt-triggered inputs with pull-down • Output in phase with input (IR2117) or out of phase with input (IR2118) • Also available LEAD-FREE -
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FP75R12KE3 IGBT Modules 1200V
TransistorsMake - Infineon
Specifications
- IGBT Silicon Modules
- Configuration:Hex
- Collector- Emitter Voltage VCEO Max: 1200 V
- Collector-Emitter Saturation Voltage: 2.15 V
- Continuous Collector Current at 25 C: 105 A
- Gate-Emitter Leakage Current: 400 nA
- Pd - Power Dissipation: 350 W
- Package/Case: EconoPIM3
- Minimum Operating Temperature: - 40 C
- Maximum Operating Temperature: + 125 C
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SKKH570/16E Diode Modules
TransistorsMake -SEMIKRON
Features
- Heat transfer through aluminium nitride ceramic isolated metal baseplate
- Precious metal pressure contacts for high reliability
- Thyristor with amplifying gate
- UL recognized, file no. E 63 532
- AC motor softstarters
- Input converters for AC inverter drives
- DC motor control (e.g. for machine tools)
- Temperature control (e.g. for ovens, chemical processes)
- Professionals light dimming (studios, theaters)
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ADS1230IPWR
TransistorsMake - TI
Feature
- Complete Front-End for Bridge Sensor
- Onboard PGA with Gain of 64 or 128
- Onboard Oscillator
- 18-Bit Noise-Free Resolution
- Selectable 10SPS or 80SPS Data Rates
- Simultaneous 50Hz and 60Hz Rejection at 10 SPS
- External Voltage Reference up to 5V for Ratiometric Measurements
- Simple, Pin-Driven Control
- Two-Wire Serial Digital Interface
- Tiny 16-pin TSSOP Package
- Supply Range: 2.7V to 5.3V
- –40°C to +85°C Temperature Range
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XTR117AIDGKR
TransistorsMake - TI
Feature
- LOW QUIESCENT CURRENT: 130μA
- 5V REGULATOR FOR EXTERNAL CIRCUITS
- LOW SPAN ERROR: 0.05%
- LOW NONLINEARITY ERROR: 0.003%
- WIDE-LOOP SUPPLY RANGE: 7.5V to 40V
- MSOP-8 AND DFN-8 PACKAGES
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AD603AR
TransistorsMake - ADI
Feature
- Linear-in-dB gain control
- Pin-programmable gain ranges
−11 dB to +31 dB with 90 MHz bandwidth - 9 dB to 51 dB with 9 MHz bandwidth
- Any intermediate range, for example −1 dB to +41 dB with 30 MHz bandwidth
- Bandwidth independent of variable gain
- 1.3 nV/√Hz input noise spectral density
- ±0.5 dB typical gain accuracy
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EVM31-050A
TransistorsMake – Fuji
Feature
- Including freewheeling diode
- Excellent safe operating area
- Insulated type
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ETL81-050
TransistorsMake - Fuji
Feature
- Including freewheeling diode
- Excellent safe operating area
- Insulated type
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KS624530-PRX
TransistorsMake - PRX
Feature
- Isolated mounting
- Planar chips
- Discrete fast recovery feedback diode
- High gain
- Quick connect base Emitter signal terminal
- Base emitter speed – up Diode
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KD421210A7
Uncategorized, TransistorsMake - PRX
Feature
- Isolated mounting
- Planar chips
- Discrete fast recovery feedback diode
- High gain
- Quick connect base Emitter signal terminal
- Base emitter speed – up Diode
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KD221K03-PRX
TransistorsMake - PRX
Feature
- Isolated mounting
- Planar chips
- Discrete fast recovery feedback diode
- High gain
- Quick connect base Emitter signal terminal
- Base emitter speed – up Diode
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KD221205A7
TransistorsMake - PRX
Feature
- Isolated mounting
- Planar chips
- Discrete fast recovery feedback diode
- High gain
- Quick connect base Emitter signal terminal
- Base emitter speed - up Diode