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    MOSFET BYV32E-200

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    MAKE – NXP

    •  Low forward volt drop VR = 150 V/ 200 V
    •  Fast switching
    •  Soft recovery characteristic VF £ 0.85 V
    •  Reverse surge capability
    •  High thermal cycling performance IO(AV) = 20 A
    •  Low thermal resistance
       
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    MOSFET 40EPS12

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    MAKE – IR

    • Optimized for very low forward voltage drop with moderate leakage
    • glass passivation technology has reliable operation upto 150
           
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    MOSFET IRG4PH50KD

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    MAKE – IR

    • High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V
    • Combines low conduction losses with high switching speed
    • Tighter parameter distribution and higher efficiency than previous generations
    • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
         
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    MOSFET GT80J101

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    MAKE – TOSHIBA

    • High input impedence
    • High Speed
    • Low Saturation Voltage
    • Enhancement Mode
         
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    MOSFET TE30N50E

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    MAKE – MOTOROLA

    • 2500 V RMS Isolated ISOTOP Package
    •  Avalanche Energy Specified
    •  Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
    •  Diode is Characterized for Use in Bridge Circuits
    •  Very Low Internal Parasitic Inductance
    •  IDSS and VDS(on) Specified at Elevated Temperature
    •  U.L. Recognized, File #E69369
     
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    MOSFET STW9NK90Z

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    MAKE –ST

    • TYPICAL RDS(on) = 1.1 W
    •  EXTREMELY HIGH dv/dt CAPABILITY
    •  100% AVALANCHE TESTED
    •  GATE CHARGE MINIMIZED
    •  VERY LOW INTRINSIC CAPACITANCES
    •  VERY GOOD MANUFACTURING REPEATIBILITY
     
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    MOSFET P60NF10

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    MAKE – ST

    • TYPICAL RDS(on) = 0.019 Ω
    •  EXTREMELY HIGHL dv/dt CAPABILITY
    •  100% AVALANCHE TESTED
    •  SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
       
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    MOSFET P60NF06

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    MAKE – ST

    • TYPICAL RDS(on) = 0.014W
    •  EXCEPTIONAL dv/dt CAPABILITY
    •  100% AVALANCHE TESTED
    •  APPLICATION ORIENTED CHARACTERIZATION
         
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    MOSFET P5NB60FP

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    MAKE – ST

    • TYPICAL RDS(on) = 1.8 W
    •  EXTREMELY HIGH dv/dt CAPABILITY
    •  100% AVALANCHE TESTED
    •  VERY LOW INTRINSIC CAPACITANCES
    •  GATE CHARGE MINIMIZED
     
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    MOSFET IXTK33N50

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    MAKE – IXYS

    • Low RDS (on) HDMOSTM process
    • Rugged polysilicon gate cell structure
    •  International standard package
    •  Fast switching times
         
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    MOSFET IXFN26N90

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    MAKE – IXYS

    • N-Channel Enhancement Mode
    • Avalanche Rated,High dv/dt, Low trr
    • Fast Intrinsic Diode
    • International standard package
    •  Low RDS(ON) HDMOSTM process
    •  Avalanche Rated
    •  Low package inductance
    •  Fast intrinsic diode
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    MOSFET IRFZ34N

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    MAKE – IR

    • Advanced Process Technology
    • Dynamic dv/dt Rating
    • 175°C Operating Temperature
    • Fast Switching
    • Fully Avalanche Rated
     
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    MOSFET IRL3713

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    MAKE – IR

    • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
    • High Frequency Buck Converters for Computer Processor Power
    • 100% RG Tested
    • Ultra-Low Gate Impedance
    • Very Low RDS(on) at 4.5V VGS
    • Fully Characterized Avalanche Voltage and Current