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QuickviewMOSFET BYV32E-200
MOSFET, SemiconductorsMAKE – NXP
- Low forward volt drop VR = 150 V/ 200 V
- Fast switching
- Soft recovery characteristic VF £ 0.85 V
- Reverse surge capability
- High thermal cycling performance IO(AV) = 20 A
- Low thermal resistance
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QuickviewMOSFET 40EPS12
MOSFET, SemiconductorsMAKE – IR
- Optimized for very low forward voltage drop with moderate leakage
- glass passivation technology has reliable operation upto 150
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QuickviewMOSFET IRG4PH50KD
MOSFET, SemiconductorsMAKE – IR
- High short circuit rating optimized for motor control, tsc =10μs, VCC = 720V , TJ = 125°C, VGE = 15V
- Combines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
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QuickviewMOSFET GT80J101
MOSFET, SemiconductorsMAKE – TOSHIBA
- High input impedence
- High Speed
- Low Saturation Voltage
- Enhancement Mode
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QuickviewMOSFET TE30N50E
MOSFET, SemiconductorsMAKE – MOTOROLA
- 2500 V RMS Isolated ISOTOP Package
- Avalanche Energy Specified
- Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- Very Low Internal Parasitic Inductance
- IDSS and VDS(on) Specified at Elevated Temperature
- U.L. Recognized, File #E69369
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QuickviewMOSFET STW9NK90Z
MOSFET, SemiconductorsMAKE –ST
- TYPICAL RDS(on) = 1.1 W
- EXTREMELY HIGH dv/dt CAPABILITY
- 100% AVALANCHE TESTED
- GATE CHARGE MINIMIZED
- VERY LOW INTRINSIC CAPACITANCES
- VERY GOOD MANUFACTURING REPEATIBILITY
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QuickviewMOSFET P60NF10
MOSFET, SemiconductorsMAKE – ST
- TYPICAL RDS(on) = 0.019 Ω
- EXTREMELY HIGHL dv/dt CAPABILITY
- 100% AVALANCHE TESTED
- SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
