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K2225 Hitachi Mosfet
MOSFETMake - Hitachi
Feature
- High breakdown voltage
- High speed switching
- Low drive current
- No Secondary Breakdown
- Suitable for Switching regulator, DC-DC converter
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G15N60 E Series Power MOSFET
IGBT, MOSFETMake - Vishay
Feature
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)Applications
• Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) -
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IRFB4410Z
MOSFETMake - vishay
Applications
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Benefits
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead-Free
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JT371K10-PRX
MOSFETMake - PRX
Feature
- Isolated mounting
- Hybrid construction
- Internal series gate resistors
- Low thermal impedance
- Low losses
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LM111J
IC, MOSFETMake - TI
Feature
- Fast Response Times
- Strobe Capability
- Maximum Input Bias Current . . . 300 nA
- Maximum Input Offset Current . . . 70 nA
- Can Operate From Single 5-V Supply
- Available in Q-Temp Automotive – High-Reliability Automotive Applications – Configuration Control/Print Support – Qualification to Automotive Stan
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IRF640NPBF
MOSFETMake - INFINEON
Feature
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead Free
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IRF630NPBF
MOSFETMake - INFINEON
Feature
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
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IRF9530NPBF
MOSFETMake - INFINEON
Feature
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
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VS-25TTS12-M3
MOSFETMake - VISHAY
Feature
- Designed and qualified according to JEDEC-JESD47
- 125 °C max. operating junction temperature
- Material categorization:
- For definitions of compliance please see
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IRFP250NPBF
MOSFETMake - IR/VISHAY
Feature
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements - TO-247AC - PD - 95007
- Lead-Free
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IRFP150NPBF
MOSFETMake - IR/VISHAY
Feature
- Advanced process technology
- Dynamic dv/dt rating
- 175 c operating temperature
- Fast switching
- Fully avalanche rated
- Lead - Free
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IRF3710PBF
MOSFETMake - INFINEON
Feature
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free