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QuickviewMOSFET IXFR26N50Q
MOSFET, SemiconductorsMAKE - IXYS
Features- Silicon chip on Direct-Copper-Bondsubstrate. - High power dissipation. - Isolated mounting surface. - 2500V electrical isolation.
- Low drain to tab capacitance(<35pF).
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QuickviewMOSFET IXTK33N50
MOSFET, SemiconductorsMAKE - IXYS
Features- Low RDS (on) HDMOSTM process.
- Rugged polysilicon gate cell structure.
- International standard package.
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QuickviewMOSFET IXTH30N50
MOSFET, SemiconductorsMAKE - IXYS
Features- International standard package JEDEC TO-247 AD
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
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QuickviewMOSFET IXFR58N20Q
MOSFET, SemiconductorsMAKE - IXYS
Features- Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
- Low drain to tab capacitance(<50pF)
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QuickviewMOSFET IXFR32N50
MOSFET, SemiconductorsMAKE - IXYS
Features- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
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QuickviewMOSFET IXFK80N20Q
MOSFET, SemiconductorsMAKE - IXYS
Features- Low gate charge
- International standard packages
- EpoxymeetUL94V-0, flammability classification
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QuickviewMOSFET IXFH40N30Q
MOSFET, SemiconductorsMAKE - IXYS
Features- International Standard Packages
- Low Intrinsic Gate Resistance
- Low Package Inductance
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QuickviewMOSFET IXFH32N50
MOSFET, SemiconductorsMAKE - IXYS
Features- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
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QuickviewMOSFET IRL3103
MOSFET, SemiconductorsMAKE - IR
Features- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
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QuickviewMOSFET 2SK956
MOSFET, SemiconductorsMAKE - FUJI
Features- High speed switching.
- Low on-resistance
- No secondary breakdown
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QuickviewMOSFET 2SK2611
MOSFET, SemiconductorsMAKE - TOSHIBA
Features- Drain-Source Voltage - 900V
- Drain-Gate Voltage - 900V
- Storage Temperature Range - -55~150 degree celcius
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QuickviewMOSFET 2SK3878
MOSFET, SemiconductorsMAKE - TOSHIBA
Features- Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
- High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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QuickviewMOSFET 2SK4107
MOSFET, SemiconductorsMAKE - TOSHIBA
Features- Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
- High forward transfer admittance : |Yfs| = 8.5 S (typ.)
- Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
- Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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QuickviewMOSFET 2SK4108
MOSFET, SemiconductorsMAKE - TOSHIBA
Features- Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)
- High forward transfer admittance : |Yfs| = 14 S (typ.)
- Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
- Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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QuickviewMOSFET FQA38N30
MOSFET, SemiconductorsMAKE - FSC
Features- 38.4A, 300V, RDS(on)= 0.085Ω @vgs=10 V
- Low gate Charge (Typical 90 nC)
- Low Crss (Typical 70 pF)
